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www.irf.com 1 irfr3704 irfu3704 smps mosfet hexfet power mosfet benefits v dss r ds(on) max i d 20v 9.5m ? 75a when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 d-pak i-pak irfr3704 irfu3704 ultra-low r ds(on) very low gate impedance fully characterized avalanche voltage and current notes through are on page 9 high frequency dc-dc isolated converters with synchronous rectification for telecom and industrial use applications high frequency buck converters for computer processor power 100% r g tested absolute maximum ratin g s symbol parameter units v ds drain-source voltage v gs gate-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c t j , t stg junction and storage temperature range c thermal resistance symbol parameter typ max units r jc junction-to-case ??? 1.7 r ja junction-to-ambient (pcb mount) * ??? 50 c/w r ja junction-to-ambient ??? 110 v a w -55 to +175 90 0.58 62 max 75 63 300 20 20
irfr/u3704 2 www.irf.com static @ t j = 25c (unless otherwise specified) symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 20 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.021 ??? v/c ??? 7.3 9.5 ??? 11 14 v gs(th) gate threshold voltage 1.0 ??? 3.0 v ??? ??? 10 ??? ??? 100 gate-to-source forward leakage ??? ??? 200 gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) symbol parameter min typ max units g fs forward transconductance 42 ??? ??? s q g total gate charge ??? 19 ??? q gs gate-to-source charge ??? 8.1 ??? nc q gd gate-to-drain ("miller") charge ??? 6.4 ??? q oss output gate charge ??? 16 24 v gs = 0v, v ds = 10v r g gate resistance 0.3 ??? 3.2 ? t d(on) turn-on delay time ??? 8.4 ??? t r rise time ??? 98 ??? t d(off) turn-off delay time ??? 12 ??? ns t f fall time ??? 5.0 ??? c iss input capacitance ??? 1996 ??? c oss output capacitance ??? 1085 ??? c rss reverse transfer capacitance ??? 155 ??? avalanche characteristics symbol parameter units e as si ng l e p u l se a va l anc h e e nergy mj i ar a va l anc h e c urrent a diode characteristics symbol parameter min typ max units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd ??? 0.88 1.3 ??? 0.82 ??? t rr reverse recovery time ??? 38 57 ns q rr reverse recovery charge ??? 45 68 nc t rr reverse recovery time ??? 41 62 ns q rr reverse recovery charge ??? 50 75 nc pf a diode forward voltage v ??? ??? 75 ??? ??? 300 m ? a na v gs = 4.5v, i d = 12a v ds = v gs , i d = 250a v ds = 20v, v gs = 0v v ds = 16v, v gs = 0v, t j = 125c v gs = 16v v gs = -16v t j = 125c, i f = 35.5a, v r = 20v di/dt = 100a/s t j = 125c, i s = 35.5a, v gs = 0v conditions showing the integral reverse p-n junction diode. t j = 25c, i s = 35.5a, v gs = 0v t j = 25c, i f = 35.5a, v r = 20v di/dt = 100a/s ? = 1.0mhz 216 71 mosfet symbol max typ ??? ??? conditions v ds = 25v, i d = 57a i d = 28.4a v ds = 10v v gs = 4.5v v gs = 0v v ds = 10v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 15a v gs = 4.5v v dd = 10v i d = 28.4a r g = 1.8 ? r ds(on) i dss i gss static drain-to-source on-resistance drain-to-source leakage current
irfr/u3704 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 10 100 1000 3.0 4.0 5.0 6.0 7.0 8.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 75a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 25c vgs top 10.0v 9.0v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 175c vgs top 10.0v 9.00v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v
irfr/u3704 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 28.4a v = 10v ds 0.1 1 10 100 1000 0.2 0.5 0.8 1.1 1.4 1.7 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
irfr/u3704 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 t , case temperature ( c) i , drain current (a) c d limited by package
irfr/u3704 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 50 100 150 200 250 300 i d , drain current ( a ) 0.005 0.010 0.015 0.020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = 4.5v vgs = 10v 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 11.6a 23.8a 28.4a fig 14a&b. basic gate charge test circuit and waveforms 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.006 0.007 0.008 0.009 0.010 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 35.5a
irfr/u3704 www.irf.com 7 d-pak (to-252aa) package outline

d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006).
irfr/u3704 8 www.irf.com i-pak (to-251aa) package outline

i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
irfr/u3704 www.irf.com 9 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.5 mh r g = 25 ? , i as = 28.4 a. pulse width 300s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information

data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/04

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